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HA17558 Series
Dual Operational Amplifier
REJ03D0682-0100 (Previous: ADE-204-042) Rev.1.00 Jun 15, 2005
Description
HA17558 is dual operational amplifiers which provides internal frequency compensation and high performance. It can be applied widely to measuring control equipment and to general Use. The two amplifiers share a common bias network and power supply leads.
Features
* High voltage Gain: 104dB (Typ) * High speed: 1V/s * Continuous short-circuit protection * Low-noise operational amplifiers * Internal frequency compensation
Ordering Information
Type No. HA17558FP HA17558F HA17558 HA17558PS Application Industrial use Commercial use Commercial use Industrial use Package Code (Previous Code) PRSP0008DE-B (FP-8DGV) PRSP0008DE-B (FP-8DGV) PRDP0008AF-A (DP-8B) PRDP0008AF-A (DP-8B)
Rev.1.00 Jun 15, 2005 page 1 of 12
HA17558 Series
Pin Arrangement
Vout1 1 1 Vin(-)1 2 -+ 2 +- 7 Vout2 8 VCC
Vin(+)1
3
6
Vin(-)2
VEE
4
5
Vin(+)2
(Top View)
Circuit Schematic (1/2)
VCC
Vin(+)
Vin(-) Vout
to VCC
VEE
Rev.1.00 Jun 15, 2005 page 2 of 12
HA17558 Series
Absolute Maximum Ratings
(Ta = 25C)
Item Supply voltage Differential input voltage Common-mode input voltage Power dissipation Operating temperature Symbol VCC VEE VIN (diff) 3 VCM* PT Topr Ratings HA17558 +18 -18 30 15 670* -20 to +75
1
HA17558PS +18 -18 30 15 670* -20 to +75
1
HA17558F +18 -18 30 15 385* -20 to +75
2
HA17558FP +18 -18 30 15 385* -20 to +75
2
Unit V V V V mW -20 to +75
Storage temperature Tstg -55 to +125 -55 to +125 -55 to +125 -55 to +125 C Notes: 1. These are the allowable values up to Ta = 45 C. Derate by 8.3mW/C above that temperature. 2. These are the allowable values up to Ta = 31 C mounting on 30% wiring density glass epoxy board. Derate by 7.14mW/C above that temperature. 3. If the supply voltage is less than 15V, input voltage should be less than supply voltage.
Electrical Characteristics
(Ta = 25C, VCC = +15V, VEE = -15V)
Item Input offset voltage Input offset current Input bias current Voltage gain Maximum output voltage Maximum output voltage Common mode input voltage range Common mode rejection ratio Supply voltage rejection ratio Power dissipation Slew rate Equivalent input noise voltage Channel separation Symbol VIO IIO IIB AVD Vop-p Vop-p VCM CMR PSRR Pd SR VNI CS Min -- -- -- 86 12 10 12 70 -- -- -- -- -- Typ 0.5 5 50 104 14 12.4 14 100 10 90 1.0 6 105 Max 6 200 500 -- -- -- -- -- 150 170 -- -- -- Unit mV nA nA dB V V V dB V/V mW V/s Vp-p dB Test conditions RS 10k
RL 2k, VO = 10V RL 10k RL 2k RS 10k RS 10k 2-channel, No load AVD = 1 RS = 1k, f = 1HZ to 1kHZ f = 1kHz
Rev.1.00 Jun 15, 2005 page 3 of 12
HA17558 Series
Characteristic Curves
Open Loop Voltage Gain vs. Frequency Open Loop Voltage Gain AV(OL) (dB) 120 100 80 60 40 20 0 1 10 100 1 k 10 k 100 k 1 M 10 M Frequency f (Hz) VCC = 15 V VEE = -15 V RL = 2 k Maximum Output Voltage VOP-P (V) 36 32 28 24 20 16 12 8 4 0 100 1k 10 k 100 k Frequency f (Hz) 1M VCC = 15 V VEE = -15 V RL = 2 k Maximum Output Voltage vs. Frequency
Power Supply Rejection Ratio PSRR (dB)
Power Supply Rejection Ratio vs. Ambient Temperature 120 VCC = 15 V VEE = -15 V Voltage Gain AVD (dB) 110 120 130
Voltage Gain vs. Ambient Temperature VCC = 15 V VEE = -15 V
100
110
90
100
80
90
70 -20
0 20 40 60 Ambient Temperature Ta (C)
80
80 -20
0 20 40 60 Ambient Temperature Ta (C)
80
Rev.1.00 Jun 15, 2005 page 4 of 12
HA17558 Series
Power Supply Rejection Ratio vs. Frequency Power Supply Rejection Ratio PSRR (dB) 120 100 80 60 40 20 0 100 VCC = 15 V VEE = -15 V
300
1k
3k 10 k 30 k Frequency f (Hz)
100 k 300 k
1M
Common-mode Rejection Ratio vs. Frequency Common-mode Rejection Ratio CMR (dB) 120 100 80 60 40 20 0 100 VCC = 15 V VEE = -15 V Ta = 25C RL =
300
1k
3k 10 k 30 k Frequency f (Hz)
100 k 300 k
1M
Rev.1.00 Jun 15, 2005 page 5 of 12
HA17558 Series
Maximum Output Voltage vs. Ambient Temperature
Transient Response
Maximum Output Voltage VOP-P (VP-P)
10
40
Output Voltage VO (V)
VCC = 15 V VEE = -15 V
5
32
VCC = 15 V VEE = -15 V RL = 2 k
0 -5 -10
24
16
8
0
10
20
30
40
Time t (s)
0 -20
60 0 20 40 Ambient Temperature Ta (C)
80
Power Dissipation vs. Ambient Temperature VCC = 15 V VEE = -15 V RL =
Maximum Output Voltage vs. Load Resistance
Maximum Output Voltage VOP-P (VP-P)
100
30
Power Dissipation Pd (mW)
90
25 VCC = 15 V VEE = -15 V f = 1 kHz
80
20
70
15
60
10
50 -20
0
20
40
60
80
5 100 200
500
1k
2k
5k
10 k
Ambient Temperature Ta (C)
Load Resistance RL ()
Rev.1.00 Jun 15, 2005 page 6 of 12
HA17558 Series
Common-mode Input Voltage vs. Supply Voltage 20
Supply Current vs. Supply Voltage 5
4
Common-mode Input Voltage VCM (V)
RL =
Supply Current ICC (mA)
10
3
2
0
1
-10
0 4
6
9
12
15
18
Supply Voltage VCC, VEE (V)
-20 4
8 12 16 Supply Voltage VCC, VEE (V)
18
Input Bias Current vs. Ambient Temperature 100 VCC = 15 V VEE = -15 V Slew Rate vs. Supply Voltage 1.2
Input Bias Current IIB (nA)
Slew Rate SR (V/s)
80
1.0 0.8 0.6 0.4 4
60
40
20
f = 1 kHz RL = 2 k CL = 100 pF Ta = 25C AV = 1 6 9 12 15 Supply Voltage VCC, VEE (V) 18
0 -20
0 20 40 60 Ambient Temperature Ta (C)
80
Rev.1.00 Jun 15, 2005 page 7 of 12
HA17558 Series
Input Offset Current vs. Ambient Temperature 40 VCC = 15 V VEE = -15 V 20 0 -20 -40 Input Offset Voltage vs. Supply Voltage
Input Offset Current IIO (nA)
Input Offset Voltage VIO (mV)
4
2
0
-2
-20
0 20 40 60 Ambient Temperature Ta (C)
80
-4 -4
-6 -9 -12 -15 Supply Voltage VCC, VEE (V)
-18
Slew Rate vs. Ambient Temperature Voltage Gain vs. Supply Voltage 120 1.4 VCC = 15 V VEE = -15 V RL = 2 k CL = 100 pF AV = 1
Voltage Gain AVD (dB)
100 f = 10 Hz RL = 2 k 80
Slew Rate SR (V/s)
-18
1.2
1.0
0.8
60
0.6 40 -4 -6 -9 -12 -15 Supply Voltage VCC, VEE (V)
0.4 -20
0 20 40 60 Ambient Temperature Ta (C)
80
Rev.1.00 Jun 15, 2005 page 8 of 12
HA17558 Series
Output Short Current vs. Ambient Temperature 60 VCC = 15 V VEE = -15 V 50 Sink
Output Short Current IOS (mA)
40
30 Source 20
10 -20
0 20 40 60 Ambient Temperature Ta (C)
80
Input Noise Voltage vs. Frequency 100 RS = 100 30
Input Noise Voltage VNI (nV/ Hz)
10
3
1 10
30
100
300 1k Frequency f (Hz)
3k
10 k
Rev.1.00 Jun 15, 2005 page 9 of 12
HA17558 Series
Common-mode Rejection Ratio vs. Ambient Temperature 140 VCC = 15 V VEE = -15 V 120
Input Offset Voltage vs. Ambient Temperature VCC = 15 V VEE = -15 V
Common-mode Rejection Ratio CMR (dB)
Input Offset Voltage VIO (mA)
4
2
100
0
80
-2
60
-4 -20 0 20 40 60 Ambient Temperature Ta (C) 80
40 -20
0 20 40 60 Ambient Temperature Ta (C)
80
Rev.1.00 Jun 15, 2005 page 10 of 12
HA17558 Series
Circuit Example
RIAA Pre-amplifier 0.0022 F 0.01 F +15 V
+ 100 F - 36 k - Input 2.2 k 33 F + + 47 F - 1 k -15 V - 100 F + 10 k HA17558 390 k 33 F
Otuput
56 k
T.H.D. vs. Output Voltage (RIAA Pre-Amp) 1.0 60
T.H.D. vs. Output Voltage (RIAA Pre-Amp) VCC = 15 V VEE = -15 V
0.3
50
Voltage Gain AVD (dB)
0.1
T.H.D (%)
20 kHz
40
0.03 0.01 10 kHz 1 kHz
30
20
0.003 0.001 0.01
10 20 kHz 0 10
0.03
0.1 0.3 1.0 Output Voltage (Vrms)
3
10
30
100
300 1k 3k 10 k Frequency f (Vrms)
30 k
100 k
Rev.1.00 Jun 15, 2005 page 11 of 12
HA17558 Series
Package Dimensions
JEITA Package Code P-DIP8-6.3x9.6-2.54 RENESAS Code PRDP0008AF-A Previous Code DP-8B MASS[Typ.] 0.51g
D
8
5
1 0.89 b3
4
Z Dimension in Millimeters Min Nom 7.62 9.6 6.3 10.6 7.4 5.06 0.5 0.38 0.48 1.3 0.20 0 2.29 2.54 0.25 0.35 15 2.79 1.27 2.54 0.58 Max
E
Reference Symbol
e1
A A1
D E A
L
A1 bp b3
e
bp
e1
c
c
e Z L
JEITA Package Code P-SOP8-4.4x4.85-1.27
RENESAS Code PRSP0008DE-B
Previous Code FP-8DGV
MASS[Typ.] 0.1g
*1
D 5
F NOTE) 1. DIMENSIONS"*1 (Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET.
8
bp
*2
HE
E
c
Reference Symbol
Dimension in Millimeters Min Nom 4.85 4.4 Max 5.25
Index mark
Terminal cross section ( Ni/Pd/Au plating )
1 Z e 4
*3
D E A2
bp
A1 x M L1 A bp b1 c c1
0.00
0.1
0.20 2.03
0.35
0.4
0.45
0.15
0.20
0.25
HE
0 6.35 6.5 1.27
8 6.75
A
A1
L
e x y
0.12 0.15 0.75 0.42
1
y
Detail F
Z L L 0.60 1.05
0.85
Rev.1.00 Jun 15, 2005 page 12 of 12
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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